, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn silicon power transistors 1 kv switchmode iii series these transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. they are particularly suited for line- operated switchmode applications. typical applications: switching regulators inverters solenoids relay drivers motor controls deflection circuits features: ? collector-emitter voltage ? vcev = looovdc ? fast turn-off times 50 ns inductive fall time - 100c (typ) 90 ns inductive crossover time - 100c (typ) 900 ns inductive storage time - 100c (typ) ? 100c performance specified for: reverse-biased soa with inductive load switching times with inductive loads saturation voltages leakage currents ? extended fbsoa rating using ultra-fast rectifiers ? extremely high rbsoa capability maximum ratings rating collector-emitter voltage collector-emitter voltage emitter-base voltage collector current ? continuous ? peaku) base current ? continuous ? peakd) total power dissipation ffi tc = 25c (ii tc =? 100c derate above tc = 25c operating and storage junction temperature range symbol vceo vcev veb ic 'cm ib ibm pd tj, tstg MJ16010A mjh16010a 500 1000 6 15 20 10 15 175 100 1 -65 to 200 135 54 1.09 -55 to 150 unit vdc vdc vdc adc adc watts w/c ?c thermal characteristics characteristic thermal resistance, junction to case lead temperature for soldering purposes: 1/8" from case for 5 seconds symbol r&jc tl max 1 | 0.92 275 unit c/w ?c {1) pulse test: pulso width - 5 ms. duty cycle s 10%. MJ16010A mjh16010a power transistors 15 amperes 500 volts 125 and 175 watts to-204aa MJ16010A 1o-218ac mjh16010a nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
MJ16010A, mjh16010a electrical characteristics (tc = 25'c unless otherwise noted) characteristic symbol mln tvp max unit off characteristics!!) collector-emitter sustaining voltage (table 1) dc - looma, ib = o) collector cutoff current (vcev = 1000 vdc. vbe(oh) = i.svdc) (vcev = 1000 vdc, vbe(off) = 1.5 vdc, tc - 100c) collector cutoff current (vce - 1000 vdc, rbe = bo n, tc = loo-ci emitter cutoff current (veb = 6 vdc, ic = 0) vceo(sus) !cev icer iebo 500 - ? ? ? 0.003 0.020 0.020 0.005 ? 0.15 1.0 1.0 0.15 vdc madc madc madc second breakdown second breakdown collector current with base forward biased clamped inductive soa with base reverse biased is/d rbsoa see figure 14a or 14b see figure 15 on characteristics^ collector-emitter saturation voltage uc = 5 adc, ib = 1 adc) dc = 10 adc, ib = 2 adc) (1c = 10 adc, ib - 2 adc, tc = 100'c) base-emitter saturation voltage dc = 10 adc, ib = 2 adc) dc = 10 adc, ib = 2 adc, tc = 100"c) dc current gain dc = 15 adc, vce = 5vdc> vce(sat) vbe(sat) hfe - - 5 0.25 0.45 0.60 1.2 1.2 8 0.7 1 1.6 1.5 1.5 ? vdc vdc ? dynamic characteristics output capacitance (vcb = 10 vdc, ie = 0, ftest - 1 khz) cob ? ? 400 pf switching characteristics inductive load [table 1) storage time fall time crossover time storage time fall time crossover time dc = 10 adc, ibi = 1.3 adc, vbe(off) = 5 vdc, vce(pk) = 400 v (tj = 100-ci (tj = 150'ci >sv tfi 'c tsv tfi 'c ? ? - ? ? ? 900 so 90 1100 70 120 2000 250 300 ? ? - ns resistive load (table 2) delay time rise time storage time fall time storage tlma fall time dc = 10 adc, vcc = 250 vdc, ibi - 1.3 adc, pw = 30 us, duty cycle ? 2%l (ib2 = 2.6 adc. rb2 = 1.8 0) wbe(off) = 5 vdc) td tr |
